| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having good electrical connection. SOLUTION: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device comprises on a substrate: a base film; an island-shaped semiconductor film including a channel forming region, a source or drain region, a connection region to which no elements imparting one conductivity type are added, and a silicide region formed in the proximity of a surface of a portion of the source or drain region, and in the proximity of a surface of the connection region; a gate insulating film formed on the island-shaped semiconductor film; a gate electrode; a sidewall formed on side surfaces of the gate insulating film and the gate electrode; an interlayer insulating film covering the island-shaped semiconductor film, the gate insulating film, the gate electrode, and the sidewall; and a source or drain electrode electrically connected to the silicide region in the proximity of the surface of the connection region through a contact hole formed in the interlayer insulating film. COPYRIGHT: (C)2008,JPO&INPIT
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