| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging device inhibiting a smear phenomenon by a transfer gate structure. SOLUTION: The solid-state imaging device has photoelectric conversion regions, a pixel output circuit and transfer gates. The photoelectric conversion regions are arrayed on a semiconductor substrate at pixel units, and generate signal charges in response to the quantity of a light received. The pixel output circuit takes in the signal charges, and scans and outputs a picture signal. The transfer gates control a charge transfer from the photoelectric conversion regions to the pixel output circuit. Trench sections are formed among the photoelectric conversion regions and the pixel output circuit, and the transfer gates are fitted in the trench sections. COPYRIGHT: (C)2008,JPO&INPIT
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