Implant Optimization Scheme

摘要

The present invention provides a method for implanting ions in a substrate and a method for manufacturing an integrated circuit. The method for implanting ions in a substrate, among other steps, including placing a substrate ( 410 ) on an implant platen ( 405 ) such that a predominant axes ( 430 ) of the substrate ( 410 ) is rotated about 30 degrees to about 60 degrees or about 120 degrees to about 150 degrees offset from a radial with respect to the implant platen ( 405 ), and further wherein the substrate ( 410 ) is not tilted. The method further includes implanting ions into the substrate ( 410 ), the rotated position of the predominant axes ( 430 ) reducing shadowing.