| 摘要 |
A method for manufacturing a semiconductor device is provided to prevent infiltration of boron ions into a channel region and a gate depletion phenomenon by implanting N-type impurity ions. A recess gate region is formed by etching a semiconductor substrate(100) having an isolation layer(110). A gate oxide layer(120) with an uniform thickness is formed on the resultant structure. A polysilicon layer(125) doped with boron ions is formed on the entire surface. N-type impurity ions are implanted on the polysilicon layer. A gate metal layer(130) and a hard mask layer(135) are stacked on the entire surface. A gate pattern is formed by etching the polysilicon layer and the resultant structure. A spacer(140) is formed at the sidewall of the gate pattern.
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