| 摘要 |
PROBLEM TO BE SOLVED: To provide a vertical resonance surface-emitting semiconductor laser that is excellent in high-frequency characteristics without causing deterioration in mechanical strength. SOLUTION: A p-type upper DBR 107 (including an AlAs layer 106), an upper spacer layer 105, a multiple quantum well active layer 104, and a lower spacer layer 103 that are located under a wiring 113 and bonding pad 114 (-Z side) are removed by etching so as to be planarized after implanting polyimide 111. A permittivity of polyimide is a small value of about one-third of that of each semiconductor layer. Therefore, an insulating dielectric having a lower permittivity is thickly provided between the wiring 113/bonding pad 114 and an n-side ohmic electrode 115 so as to have a thickness of severalμm. COPYRIGHT: (C)2008,JPO&INPIT
|
