发明名称 METHOD FOR RINSING SILICON NITRIDE LAYER AFTER CLEANING
摘要 A method of rinsing a silicon nitride layer is provided to prevent defects of drop particles which are absorbed at a silicon nitride layer by applying a rinse process which cleans the silicon nitride layer by a SC-1 and then overflows pure water. A method for rinsing a silicon nitride layer comprises following steps. Wafers(63) having a exposed surface of silicon nitride layer are cleaned by using a SC-1 cleaning liquid. The cleaned wafers are dipped into a QDR(Quick Dump Rinse) bath(61), and the wafers are rinsed by supplying a rinsing solution until overflowing the bath. The silicon nitride layer is used as a hard mask when etching a gate.
申请公布号 KR20070107257(A) 申请公布日期 2007.11.07
申请号 KR20060039521 申请日期 2006.05.02
申请人 HYNIX SEMICONDUCTOR INC. 发明人 PARK, JI YONG;KIM, WOO JIN;YOON, HYO SEOB;MOON, OK MIN
分类号 H01L21/304 主分类号 H01L21/304
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