发明名称 |
METHOD FOR RINSING SILICON NITRIDE LAYER AFTER CLEANING |
摘要 |
A method of rinsing a silicon nitride layer is provided to prevent defects of drop particles which are absorbed at a silicon nitride layer by applying a rinse process which cleans the silicon nitride layer by a SC-1 and then overflows pure water. A method for rinsing a silicon nitride layer comprises following steps. Wafers(63) having a exposed surface of silicon nitride layer are cleaned by using a SC-1 cleaning liquid. The cleaned wafers are dipped into a QDR(Quick Dump Rinse) bath(61), and the wafers are rinsed by supplying a rinsing solution until overflowing the bath. The silicon nitride layer is used as a hard mask when etching a gate.
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申请公布号 |
KR20070107257(A) |
申请公布日期 |
2007.11.07 |
申请号 |
KR20060039521 |
申请日期 |
2006.05.02 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
PARK, JI YONG;KIM, WOO JIN;YOON, HYO SEOB;MOON, OK MIN |
分类号 |
H01L21/304 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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