| 摘要 |
A method for reading data in a flash memory device is provided to shorten data read time by storing first lower bit data in a page buffer by applying a first read voltage and then storing second lower bit data in the page buffer by applying a second read voltage without a precharge operation. An enable step enables a selection signal output part by precharging a block word line with a high level. A first data latch step transmits first data information of a selected memory cell to a bit line in response to a first word line selection signal, a drain selection signal and a source selection signal outputted from the selection signal output part. A first data transmission step senses and latches the first data information to a page buffer. A second data transmission step transmits second data information of the selected memory cell to the bit line by changing the first word line selection signal into a second word line selection signal when the block word line is precharged to a high level. A second data latch step senses and latches the second data information to the page buffer. And the data latched in the page buffer is outputted to an input/output port.
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