发明名称 |
METHOD OF POLISHING A TUNGSTEN-CONTAINING SUBSTRATE |
摘要 |
<p>The invention provides a method of chemically-mechanically polishing a substrate comprising tungsten through use of a composition comprising a tungsten etchant, an inhibitor of tungsten etching, and water, wherein the inhibitor of tungsten polishing is a polymer, copolymer, or polymer blend comprising at least one repeating group comprising at least one nitrogen-containing heterocyclic ring or a tertiary or quaternary nitrogen atom. The invention further provides a chemical-mechanical polishing composition particularly useful in polishing tungsten-containing substrates.</p> |
申请公布号 |
EP1773959(B1) |
申请公布日期 |
2007.11.07 |
申请号 |
EP20050760404 |
申请日期 |
2005.06.10 |
申请人 |
CABOT MICROELECTRONICS CORPORATION |
发明人 |
VACASSY,R.;KHANNA, D.;SIMPSON, A |
分类号 |
C09G1/02;C09K3/14;C23F3/06;H01L21/321 |
主分类号 |
C09G1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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