| 摘要 |
A method for fabricating a semiconductor device is provided to avoid a bending phenomenon of a metal interconnection contact hole by reducing the etching height of the metal interconnection contact hole. A first interlayer dielectric(125) is formed on a semiconductor substrate(100) having a gate electrode(110) and a bitline(120). The first interlayer dielectric is etched to form a lower electrode contact(135a,135b) wherein the cell region is connected to a landing plug(115) and the peripheral circuit region is connected to the bitline. The lower electrode contact can be made of polysilicon and tungsten. A second interlayer dielectric(140) is formed on the resultant structure. The second interlayer dielectric in the cell region is etched to form a capacitor connected to the lower electrode contact. After a third interlayer dielectric(160) is formed on the resultant structure, the second and third interlayer dielectrics are etched to form a metal interconnection contact wherein the cell region is connected to a capacitor and the peripheral circuit region is connected to the lower electrode contact. The metal interconnection contact is made of tungsten.
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