发明名称 |
Method to form a contact hole |
摘要 |
A example method of forming of a contact hole by removing residue and oxide spacer beside a nitride spacer after a CF containing etch. We provide a gate structure with nitride spacers on the sidewalls of the gate. We provide a dielectric layer (oxide) over the substrate and gate structure. We form a contact photoresist pattern over the oxide dielectric layer. We etch the oxide dielectric layer using fluorocarbons (CxFy) to form contact openings and residual spacer. The photoresist is striped. Preferably, a NF<SUB>3 </SUB>and N<SUB>2 </SUB>and H<SUB>2 </SUB>plasma treatment is performed to deposit a byproducts layer over the residual spacer. The byproducts layer and residual spacer are removed preferably using one of the following processes: (1) heat (2) DI rinse or (3) IR or UV radiation.
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申请公布号 |
US7291550(B2) |
申请公布日期 |
2007.11.06 |
申请号 |
US20040778293 |
申请日期 |
2004.02.13 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. |
发明人 |
KIM JEONG-HO |
分类号 |
H01L21/4763;H01L21/306;H01L21/311;H01L21/3205;H01L21/60 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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