Semiconductor laser device, method for fabricating the same, and optical disk apparatus

摘要

A semiconductor laser device ( 10 ) includes a resonant cavity ( 12 ) in which a quantum well active layer ( 11 ) made up of barrier layers of gallium nitride and well layers of indium gallium nitride is vertically sandwiched between at least light guide layers of n- and p-type aluminum gallium nitride. An end facet reflective film ( 13 ) is formed on a reflective end facet ( 10 b) opposite to a light-emitting end facet ( 10 a) in the resonant cavity ( 12 ). The end facet reflective film ( 13 ) has a structure including a plurality of unit reflective films ( 130 ), each of which is made up of a low-refractive-index film ( 13 a) of silicon dioxide and a high-refractive-index film ( 13 b) of niobium oxide. The low-and high-refractive-index films are deposited in this order on the end facet of the resonant cavity ( 12 ).