| 摘要 |
[PROBLEMS] To provide a storage element matrix wherein 1T-DRAM storage elements which have high density but do not cause multiselection are laid, a method for manufacturing such storage element matrix, and a semiconductor circuit device using such storage element matrix. [MEANS FOR SOLVING PROBLEMS] The storage element matrix is provided with an isolated semiconductor region on an insulating supporting substrate; the storage element formed in the semiconductor region; and an insulating region for insulating the storage element. The storage element is provided with a source region; a drain region; a front plane gate region arranged on a side plane of the semiconductor region through a gate insulating film so as to separate the source region from the drain region; and a rear plane gate region arranged on a side plane facing the side plane of the semiconductor region through a gate insulating film so as to separate the source region from the drain region. The storage element shares the rear plane gate region with a storage element adjacent in a row direction. |
