TRANSISTOR WITH BULB TYPE RECESSED CHANNEL AND METHOD FOR MANUFACTURING THE SAME

摘要

A transistor with a bulb type recessed channel and a method for manufacturing the same are provided to improve the operation reliability of the transistor by preventing growth and movement of voids. A bulb type recessed pattern is formed on a substrate(21). A gate insulation film(27) is formed on the substrate, on which the bulb type recessed pattern is formed. A first gate conduction film(28A) is formed on the gate insulation film. A thermal process is performed to expand a cavity inside the first gate conduction film. A second gate conduction film(29) is formed on the first gate conduction film, such that the bulb type recessed pattern is buried. The thermal process and a rinsing process are performed.