| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing a thermal stress applied to a semiconductor element or the like. <P>SOLUTION: First and second wiring members 13, 14 of about a plate-like shape are directly joined with main electrodes 11a, 11b of the longitudinal semiconductor element 11 for current control, the semiconductor element 11 and the joining part between the semiconductor element 11 and the wiring members 13, 14 are sealed by a sealing resin 12. The wiring members 13, 14 are made of a low thermal expansion conductive material with a low coefficient of thermal expansion such as CuMo and CuW. An FPC may be joined with signal electrodes of the semiconductor element 11. <P>COPYRIGHT: (C)2008,JPO&INPIT |
