| 摘要 |
PROBLEM TO BE SOLVED: To provide a vertical plasma CVD apparatus capable of supporting a substrate in a vertical direction with a simple configuration, and heating the substrate in the vertical direction. SOLUTION: The vertical plasma CVD apparatus performs the film deposition with a substrate surface arranged in the vertical direction in a film deposition chamber, and has a trapezoidal inclined heater for supporting the substrate and heating or heat-insulating the substrate. The trapezoidal inclined heater 10 has two supporting faces 11 for vertically supporting a substrate 20, and a heating unit for heating the supporting faces 11. The two supporting faces 11 hold the heating unit and are inclined to form a trapezoidal section with a narrow top side and a wide bottom side. Each supporting face 11 supports the substrate 20 thereon in a substantially vertical direction without requesting any special mechanism for fixing the substrate 20 by allowing the substrate to be loaded on the supporting face by its self weight. Since the heat from the heating unit is transmitted via the supporting faces 11 for heating or heat-insulating the substrate, the substrate can be directly heated without holding any vacuum part between the substrate and the supporting face 11, and the heating efficiency can be enhanced. COPYRIGHT: (C)2008,JPO&INPIT
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