| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To avoid a deficiency in bonding force during mounting with respect to a semiconductor device such that the top surface of an upper-layer insulator film on a high-frequency integrated circuit provided at a top-surface center of a silicon substrate is defined as a wiring formation inhibition region for avoiding crosstalk with the high-frequency integrated circuit. <P>SOLUTION: A wiring 9 is provided at a circumference of the wiring formation inhibition region 7 on the top surface of the upper-layer insulator film 5. A columnar electrode 10 is provided on the top surface of a connection pad of the wiring 9. A sealing film 11 is provided on the top surface of the upper-layer insulator film 5 including the wiring 9. Solder balls 14 are provided on the sealing film 11 around the wiring formation inhibition region 7 while connected to top surfaces of columnar electrodes 10 across surface treatment layers 12. On the sealing film 11, dummy surface treatment layers 13 and dummy solder balls 15 are provided in the wiring formation inhibition region 7. Consequently, a deficiency in bonding force during mounting can be avoided because of the presence of the dummy solder balls 15. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
