| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a stencil mask having through-holes for forming a variety of irradiation regions in which a desired region on the surface of a semiconductor substrate is irradiated with ionized atoms having passed through the through-hole with high coincidence. <P>SOLUTION: The stencil mask 10 has a backside layer 50 on the side where a semiconductor substrate is arranged, a surface layer 20 on the incident side of ionized atoms, and an intermediate layer 30 provided between the backside layer 50 and the surface layer 20. Third through-holes 52 and 56 having a profile corresponding to a predetermined region are formed in the backside layer 50. Second through-holes 32 and 36 communicating with the third through-holes 52 and 56 are formed in the intermediate layer 30. In a range of the surface layer 20 corresponding to at least one round second through-holes 32, a plurality of first through-holes 22 communicating with that round second through-holes 32 are formed while being dispersed. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
