| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid state imaging device that can effectively suppress sensitivity degradation caused by the outflow of an electrical charge. SOLUTION: A plurality of pixel cells are arranged on a semiconductor substrate 1 in a matrix form. Each pixel cell comprises a photo diode 3 that converts an incident beam into a signal charge for accumulation, a MOS transistor 16 that reads out the signal charge accumulated in the photo diode, an element separating region 25 that separates the photo diode and the MOS transistor, a separating injection layer 27 formed on the lower surface of the element separating region, and an impurity region 1a provided to surround the photo diode, the side and the lower surface of the element separating region and the separating injection layer. The separating injection layer is formed from the side surface toward the lower surface of the element separating region. COPYRIGHT: (C)2008,JPO&INPIT
|
