| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for semiconductor device which easily performs a surface treatment for reducing a defect on a top surface of a semiconductor substrate and a dangling bond at an end by bonding them to sulfur, and to provide a generation source of sulfur. SOLUTION: A surface treating device for semiconductor substrate is a surface treating device for semiconductor substrate that performs termination processing for a surface of a substrate with supplied gas containing supplied in a chamber adjusted to predetermined pressure. The device includes a sulfur gas generation source where a layer containing sulfur is formed, a stage where the substrate whose surface is to be surface-treated is fixed, a heater which heats the inside of the chamber to temperature at which the gas is produced by the sulfur gas generation source, and an exhausting device which controls the inside of the chamber to fixed pressure. COPYRIGHT: (C)2008,JPO&INPIT |
