| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To reduce optical deterioration of a photoelectric conversion apparatus and improve photoelectric conversion efficiency. <P>SOLUTION: The photoelectric conversion apparatus is configured so that a first electrode; an amorphous silicon layer of a pin structure or a nip structure consisting of a p-type silicon layer, an n-type silicon layer, and an i-type silicon layer; and a second electrode are at least sequentially laminated on an insulating substrate. A surface of the amorphous silicon layer side of the first electrode has a texture structure having a fine concave 12a and a fine convex 12b. In this apparatus, a number density of the convex 12b is 4-12 pcs./μm<SP>2</SP>. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
