发明名称 |
DYNAMIC RANDOM ACCESS MEMORY DEVICE AND METHOD FOR SELF-REFRESHING MEMORY CELLS WITH TEMPERATURE COMPENSATED SELF-REFRESH |
摘要 |
A dynamic random access memory (DRAM) device has an array of DRAM cells of rows by columns. Each DRAM cell of the array is coupled with a wordline of a corresponding row and a bitline of a corresponding column. An entry into and an exit from the self-refresh mode are detected by a mode detector and a self-refresh mode signal is provided. An oscillation circuit generates in response to the self-refresh mode signal generates a basic time period. A first frequency divider/time period multiplier changes the basic time period in accordance with a process variation factor relating to the DRAM device. A second frequency divider/time period multiplier further changes the changed time period in accordance with a temperature change factor relating to the DRAM device. In the self-refresh mode, data stored in the DRAM cells is refreshed. In accordance with the two factors, the DRAM devices perform and achieve reliable self-refresh for variable DRAM cell retention time.
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申请公布号 |
US2007253269(A1) |
申请公布日期 |
2007.11.01 |
申请号 |
US20060412960 |
申请日期 |
2006.04.28 |
申请人 |
MOSAID TECHNOLOGIES INCORPORATED |
发明人 |
PYEON HONG B. |
分类号 |
G11C7/00;G11C7/04;G11C11/34 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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地址 |
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