| 摘要 |
<p>A method for manufacturing a semiconductor device is provided to increase a breakdown voltage of the semiconductor device by forming a DEMOS(Drain Extended Metal Oxide Semiconductor) transistor while forming a LOCOS on diffused NDT and PDT(P-drift) regions. A buffer oxide film(203) and a nitride film(205) are formed on a p-well to form a multilayer pad. A PR(PhotoResist) pattern(207) for defining an NDT(N-drift) is formed on the nitride film. A first etching is performed to selectively remove a portion of the nitride film. An ion implantation process is performed on the NDT pattern to form the NDT in the p-well. An in-diffusion process is performed on the NDT to form a diffused NDT(211a). A second etching process is performed on the diffused NDT, such that a LOCOS(213) is formed on the diffused NDT. The PR pattern, nitride film, and oxide film are removed and a gate poly is formed on the p-well.</p> |
