发明名称 |
Polysilicon control etch-back indicator |
摘要 |
This invention discloses a semiconductor wafer for manufacturing electronic circuit thereon. The semiconductor substrate further includes an etch-back indicator that includes trenches of different sizes having polysilicon filled in the trenches and then completely removed from some of the trenches of greater planar trench dimensions and the polysilicon still remaining in a bottom portion in some of the trenches having smaller planar trench dimensions.
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申请公布号 |
US2007252197(A1) |
申请公布日期 |
2007.11.01 |
申请号 |
US20060413248 |
申请日期 |
2006.04.29 |
申请人 |
WANG YU;LI TIESHENG;TAI SUNG-SHAN;CHANG HONG |
发明人 |
WANG YU;LI TIESHENG;TAI SUNG-SHAN;CHANG HONG |
分类号 |
H01L29/94;H01L29/76;H01L31/00 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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