| 摘要 |
<P>PROBLEM TO BE SOLVED: To avoid deterioration in fidelity of a transferred image on a wafer while enabling to perform correction of a mask pattern in consideration of an influence due to oblique incidence effects, regarding an exposure mask corresponding to extreme ultraviolet light. <P>SOLUTION: The correction to the mask pattern is performed (S101) through the following steps, that is, a step, in which a light amount Q<SB>0</SB>of the 0-th diffracted light obtained by reflecting the extreme ultraviolet light is calculated when the extreme ultraviolet light is made vertically incident onto a mask face or when it is made incident at an angle considered as vertical incidence, a step, in which a light amount Q of the 0-th diffracted light obtained by reflecting the extreme ultraviolet light when the extreme ultraviolet light is made obliquely incident onto the mask face, and a step for performing pattern correction so that the light amount Q<SB>0</SB>and the light amount Q become almost equal to each other. <P>COPYRIGHT: (C)2008,JPO&INPIT |
