发明名称 SEMICONDUCTOR CIRCUIT
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor circuit which is preferable to a semiconductor element with a normally-on property or to a switching element low in threshold voltage. <P>SOLUTION: This semiconductor circuit is provided with a means for charging a negative power source from a high voltage power source and a high voltage switch controlling whether a high voltage terminal is applied with a voltage or not, and when the power supply for the power switching elements is lowered, the high voltage switch is shut off, or when the power supply for the control circuit for the power switching elements is lowered, a power supply capacitor for the control circuit is charged from the high voltage terminal allowing the control circuit to operate. Furthermore, a negative power supply voltage generation circuit using the energy charged in the capacitor from the output terminal side is provided, the voltage terminal is provided between the high voltage terminal and a reference voltage terminal, and the negative power supply voltage generation circuit is provided between the voltage terminal and a plurality of the output side terminals. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007288992(A) 申请公布日期 2007.11.01
申请号 JP20060348754 申请日期 2006.12.26
申请人 HITACHI LTD 发明人 SAKAMOTO MITSUZO
分类号 H02M1/08;H02M7/515;H03K17/06;H03K17/687 主分类号 H02M1/08
代理机构 代理人
主权项
地址