发明名称 LITHOGRAPHY SIMULATION METHOD, PROGRAM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a simulation method for performing high accuracy lithography simulation by an easy method. <P>SOLUTION: The method includes: a step S2 of obtaining a mask transmission function from a mask layout; a step S3 of obtaining an optical image of the mask layout by using the mask transmission function; a step S4 of applying a predetermined function filter to the mask transmission function to obtain a filtered function; and a step S5 of correcting the optical image by using the filtered function. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007286362(A) 申请公布日期 2007.11.01
申请号 JP20060113692 申请日期 2006.04.17
申请人 TOSHIBA CORP 发明人 SATAKE MASAKI;TANAKA SATOSHI
分类号 G03F1/36;G03F1/68;H01L21/027 主分类号 G03F1/36
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