INTEGRATION SCHEME FOR SEMICONDUCTOR PHOTODETECTORS ON AN INTEGRATED CIRCUIT CHIP
摘要
<p>A semiconductor device is described with a photodetector embedded within and a method of manufacturing the same. The photodetector may be formed above the conductive layers within the device and may detect transmitted light from the top side of the device. The process of manufacturing the device may include a damascene or a subtractive etch process.</p>
申请公布号
WO2007123754(A1)
申请公布日期
2007.11.01
申请号
WO2007US08007
申请日期
2007.03.30
申请人
INTEL CORPORATION;RESHOTKO, MIRIAM;BLOCK, BRUCE;KENCKE, DAVID
