| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which dummy protrusions are formed in a prescribed pattern in a trench element isolation region, and to provide a method for manufacturing the semiconductor device. SOLUTION: The semiconductor device includes a silicon substrate 10 having a trench element isolation region 24 in which a plurality of dummy protrusions 32 are arranged. When a first virtual straight line L1 is drawn as extending along a direction intersecting with a raw direction line, an angle is 2-40°between the first straight line L1 and a raw direction line. Furthermore, when a second virtual straight line L2 is drawn as extending along a direction intersecting with a column direction line, an angle is 2-40°between the first straight line L2 and a column direction line. The plurality of dummy protrusions 32 are arranged so as to lie on the first virtual line L1 and the second virtual line L2. COPYRIGHT: (C)2008,JPO&INPIT
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