| 摘要 |
<p>Provided is a sputtering apparatus comprising target holders (4a, 4b), on which targets are mounted to constitute cathodes, a substrate holder (30) for holding a substrate (8), and magnets (51a, 51b) for generating magnetic fields on the surface sides of the targets. A voltage from a DC power source (6) is applied to the backing plates (42) of the target holders (4a, 4b) thereby to generate a plasma. Shield covers (7) having openings (7c) are made of a conductive material, which is not melted when heated by the plasma. The shield covers (7) are connected with the earth potential. In at least the portions of the openings (7c) of the shield covers (7), thin portions (9) are formed at the open end faces with the least thickness for the entire thickness of the shield covers, and become thicker outward from the opening end faces. During the sputtering operation, the electrons emanating from the targets flow to the earth potential from the red heat portions of the thin portions (9) of the shield covers (7) being heated by the plasma, so that the DC power source circuit can be held in the closed state at all times thereby to prevent the abnormal discharge in a container.</p> |
