发明名称 |
LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING LIGHT-EMITTING ELEMENT |
摘要 |
Each second electrode formed on a second main surface of a compound semiconductor layer of a light emitting device has an alloyed contact layer disposed contacting the second main surface, aimed at reducing contact resistance with the compound semiconductor layer, and a solder layer connecting the alloyed contact layer to the conductive support. The solder layer forms therein a Sn-base solder layer disposed on the alloyed contact layer side having a melting point lower than the alloyed contact layer, and a Au-Sn-base solder layer disposed contacting the Sn-base solder layer opposed to the alloyed contact layer side, containing total Au and Sn of 80% or more, and having a melting point higher than the Sn-base solder layer. This configuration can provide excellent reliability of bonding between the Au-Sn-base solder layer and the alloyed contact layer, and consequently less causative of delamination of the Au-Sn-base solder layer. |
申请公布号 |
EP1850400(A1) |
申请公布日期 |
2007.10.31 |
申请号 |
EP20060712432 |
申请日期 |
2006.01.26 |
申请人 |
SHIN-ETSU HANDOTAI COMPANY LIMITED |
发明人 |
IKEDA, HITOSHI;OBARA, MASAYOSHI |
分类号 |
H01L33/38;H01L33/00;H01L33/30;H01L33/40;H01L33/56;H01L33/62 |
主分类号 |
H01L33/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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