| 摘要 |
A MOS capacitor and a method for manufacturing the same are provided to form a high-density and high-capacity semiconductor memory by minimizing an area of a memory array. A first region(10) is formed on a predetermined position of a semiconductor substrate(1) and includes an insulator with a predetermined thickness inserted into a depth direction of the semiconductor substrate. A second region(20) is formed in an edge of the first region. A MOS capacitor dielectric layer is formed along an internal edge of the second region and on a silicon surface of a periphery of the second region. A MOS capacitor region(50) is formed along the MOS capacitor dielectric layer. A MOS capacitor electrode(60) is formed on the MOS capacitor dielectric layer and is extended to the MOS capacitor region.
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