BISTABLE RESISTANCE VALUE ACQUISITION DEVICE, MANUFACTURING METHOD THEREOF, METAL OXIDE THIN FILM, AND MANUFACTURING METHOD THEREOF

摘要

A ferroelectric layer (104) is sandwiched by a lower electrode layer (103) and an upper electrode (105), and a prescribed voltage (DC, pulse) is applied between the lower electrode layer (103) and the upper electrode (105) to change the resistance value of the ferroelectric layer (104). When a stable high resistance mode is switched to a low resistance mode, memory operation is performed. Reading can be easily performed by reading a current value at a time when a prescribed voltage is applied on the upper electrode (105).