| 发明名称 |
LOW DEFECT DENSITY, VACANCY DOMINATED SILICON |
| 摘要 |
THE PRESENT INVENTION RELATES TO SINGLE CRYSTAL SILICON, IN INGOT OR WAFER FORM, WHICH CONTAINS AN AXIALLY SYMMETRIC REGION (6,9) IN WHICH VACANCIES ARE THE PREDOMINANT INTRINSIC POINT DEFECT AND WHICH IS SUBSTANTIALLY FREE OF AGGLOMERATED VACANCY INTRINSIC POINT DEFECTS WHEREIN THE FIRST AXIALLY SYMMETRIC REGION COMPRISES THE CENTRAL AXIS (12) OR HAS A WIDTH OF AT LEAST ABOUT 15 MM AND A PROCESS FOR THE PREPARATION THEREOF.(FIG 4) |
| 申请公布号 |
MY132874(A) |
申请公布日期 |
2007.10.31 |
| 申请号 |
MY1998PI01561 |
申请日期 |
1998.04.09 |
| 申请人 |
MEMC ELECTRONIC MATERIALS, INC. |
发明人 |
ROBERT FALSTER;STEVE A. MARKGRAF;SEAMUS A. MCQUAID;JOSEPH C. HOLZER;PAOLO MUTTI;BAYARD K. JOHNSON |
| 分类号 |
C30B15/00;C30B29/06;C30B15/14;C30B15/20;C30B15/22;C30B21/06;C30B27/02;C30B28/10;C30B30/04;C30B33/00;H01L21/322;H01L21/324 |
主分类号 |
C30B15/00 |
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