发明名称 |
METHOD OF DEPOSITING THIN FILM |
摘要 |
A method for depositing a thin film is provided to reduce one cycle and to improve a deposition speed by supplying simultaneously a Ti material, an Al material, and NH3. A method for depositing a thin film includes a process for performing repeatedly one cycle of forming an AlN thin film after forming a TiN thin film by using a Ti material, an Al material, and NH3, or one cycle of forming the TiN thin film after forming the AlN thin film. The method is characterized in that the TiN thin film is formed by supplying simultaneously the Ti material and the NH3. The AlN thin film is formed by supplying simultaneously the Al material and the NH3. A purge process is performed after supplying the Ti material, the Al material, and the NH3.
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申请公布号 |
KR20070105638(A) |
申请公布日期 |
2007.10.31 |
申请号 |
KR20060038035 |
申请日期 |
2006.04.27 |
申请人 |
INTEGRATED PROCESS SYSTEMS LTD. |
发明人 |
LEE, SANG JIN;CHO, BYUNG CHUL;LEE, JUNG WOOK;LEE, KI HOON;LEE, SAHNG KYOO;SEO, TAE WOOK |
分类号 |
H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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