发明名称 VAPOR DEPOSITION APPARATUS, VAPOR DEPOSITION METHOD AND METHOD OF FORMING INORGANIC ALIGNMENT LAYER
摘要 PROBLEM TO BE SOLVED: To uniformize a deposition angle of a deposition substance within the surface of a substrate without increasing a distance between a deposition source and the substrate. SOLUTION: In a vapor deposition method, by performing a movement control of a slit plate 22 having a slit 22a and an incident angle control of the deposition substance by a rotation angle control of a substance support base 17 at the same time, the deposition angle within the surface of the substrate W is uniformized. That is, the slit plate 22 demarcates a region to be deposited on the substrate W, the incident angle of the deposition substance with respect to the demarcated region to be deposited is controlled by a rotation angle of the substrate W, thereby, the incident angle of the deposition substance within the surface of the substrate W is made homogeneous and the deposition angle is uniformized. Preferably, the control of the incident angle of the deposition substance for the surface of the substrate W is performed in accordance with a movement position of the slit plate. By relating the rotation angle of the substrate W and the position of the slit plate 22 with each other, the deposition angle can be efficiently uniformized. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007277645(A) 申请公布日期 2007.10.25
申请号 JP20060106297 申请日期 2006.04.07
申请人 ULVAC JAPAN LTD 发明人 AOSHIRO MAKOTO;MIKAMI SHUN
分类号 C23C14/24;G02F1/13;G02F1/1337 主分类号 C23C14/24
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