| 摘要 |
PROBLEM TO BE SOLVED: To provide a spin memory having thermal fluctuation resistance, low power consumption, low current in writing performance, and high reliability. SOLUTION: The spin memory is provided with first and second conducting lines 13 and BLu, a magnetoresistance effect element MTJ arranged between one end of the first conducting line 13 and the second conducting line BLu, a switch element SW connected to the other end of the first conducting line 13, and a driver/sinker making spin implantation current Is for inverting magnetization by a spin torque flow to the magnetoresistance effect element MTJ through the first and second conducting lines 13 and BLu. The magnetoresistance effect element MTJ has a magnetic recording layer whose magnetization direction is variable and a magnetic fastening layer whose magnetization direction is fastened. An angleθis 0°<θ≤45°between a magnetization easy axis of the magnetic recording layer and a long axis of the first conducting line 13. COPYRIGHT: (C)2008,JPO&INPIT
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