发明名称 LOW POWER READ ONLY MEMORY
摘要 A low power ROM(Read Only Memory) is provided to reduce power consumption and the size of a chip by enabling all core groups constituting a ROM to share capacitors included in one group. A number of ROM(Read Only Memory) core groups are constituted between a number of word lines and a number of bit lines. A word line decoder is for selecting a desired word line among the word lines. A column decoder is for selecting a desired bit line among the bit lines. A common reference voltage generation part(300) receives a power supply voltage and the charges the power supply voltage to a first, a second or a third charging part, and generates a first common reference voltage with the charged reference voltage level and a second common reference voltage with a level lower than the first common reference voltage. A number of sense amplifiers are constituted to correspond to the ROM core groups, and compare the output of the common reference voltage generation part with data of the bit line of each ROM core group.
申请公布号 KR100769796(B1) 申请公布日期 2007.10.25
申请号 KR20060042994 申请日期 2006.05.12
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, BYUNG RYUL
分类号 G11C17/00 主分类号 G11C17/00
代理机构 代理人
主权项
地址