WAFER FOR EVALUATING HEAT TREATMENT, METHOD OF EVALUATING HEAT TREATMENT, AND METHOD OF MANUFACTURING SEMICONDUCTOR WAFER

摘要

PROBLEM TO BE SOLVED: To provide a means for evaluating the contamination of a heat treatment process easily with high sensitivity. SOLUTION: The wafer for evaluating a heat treatment comprises a silicon substrate whose oxygen concentration is 1.0×1018atoms/cm3or below and a silicon epitaxial layer formed on at least one face of the substrate. The method of evaluating a heat treatment and the method of manufacturing a semiconductor wafer use this wafer for evaluating a heat treatment. COPYRIGHT: (C)2008,JPO&INPIT