发明名称 |
NANOFIN TUNNELING TRANSISTORS |
摘要 |
<p>Disclosed herein are vertical tunneling transistors with gates that surround transistor bodies that have a width dimension less than a photolithographic dimension. These thin tunneling transistors with surrounding gates are used to obtain low sub-threshold leakage. Various embodiments provide sublithographic bodies by growing a crystalline nanofin from an amorphous structure formed on a substrate, by etching a crystalline substrate to define a crystalline nanofin from the crystalline substrate, or by growing a crystalline nanowire from an amorphous structure formed on the substrate. Other aspects and embodiments are provided herein.</p> |
申请公布号 |
WO2007120493(A1) |
申请公布日期 |
2007.10.25 |
申请号 |
WO2007US08124 |
申请日期 |
2007.04.03 |
申请人 |
MICRON TECHNOLOGY, INC.;FORBES, LEONARD |
发明人 |
FORBES, LEONARD |
分类号 |
H01L21/336;H01L21/20;H01L21/8242;H01L29/06;H01L29/786 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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