| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device for raising reliability in the device, and to provide its manufacturing method. <P>SOLUTION: A contact 31 is formed in an inter-layer insulating film 20 so as to be extended from a first area A1 with a gate electrode 11g formed therein to a second area A2 with a wiring layer 21 formed therein. Consequently, the gate electrode 11g is connected to the wiring layer 21. <P>COPYRIGHT: (C)2008,JPO&INPIT |
