| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of an SIT type organic thin film field effect transistor having a higher degree of freedom in the selection of a substrate, which can manufacture an organic thin film field effect transistor having higher element performance and can simplify the manufacturing processes. SOLUTION: In the manufacturing method, a pattern of source electrode 3 formed on a glass substrate 2 is defined as a mask pattern, an insulating film 4 is formed as a first photoresist pattern by radiating the ultraviolet ray U to the negative photoresist film 12 from the rear surface of the glass substrate 2, a positive photoresist film 10 is formed on the source electrode 3, a second photoresist pattern 10a is formed by radiating the ultraviolet ray U to the photoresist film 10 from the rear surface of the glass substrate 2 using the source electrode 3 as the mask pattern, a gate electrode 5 is formed on the basis of the photoresist pattern 10a, and an organic semiconductor layer is formed on the source electrode 3 and gate electrode 5. COPYRIGHT: (C)2005,JPO&NCIPI
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