发明名称 ESD PROTECTION FOR PASSIVE INTEGRATED DEVICES
摘要 <p>Methods and apparatus are provided for ESD protection of integrated passive devices (IPDs). The apparatus comprises one or more IPDs (60) having terminals or other elements potentially exposed to ESD transients coupled by charge leakage resistances having resistance values much larger than the ordinary impedance of the IPDs at the operating frequency of interest. When the IPD is built on a semi-insulating substrate (61), various elements of the IPD are coupled to the substrate by spaced-apart connections so that the substrate itself provides the high value resistances coupling the elements, but this is not essential. When applied to an IPD RF coupler, the ESD tolerance increased by over 70%. The invented arrangement can also be applied to active devices and integrated circuits and to IPDs with conductive or insulating substrates.</p>
申请公布号 WO2007120295(A2) 申请公布日期 2007.10.25
申请号 WO2006US61311 申请日期 2006.11.29
申请人 FREESCALE SEMICONDUCTOR INC.;MITRA, AGNI;HILL, DARRELL G.;RAJAGOPALAN, KARTHIK;REYES, ADOLFO C. 发明人 MITRA, AGNI;HILL, DARRELL G.;RAJAGOPALAN, KARTHIK;REYES, ADOLFO C.
分类号 H01L23/62 主分类号 H01L23/62
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