| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of forming a zirconium oxide film having tetragonal structure of high dielectricity constant and stableness at high temperature, and to provide a method of manufacturing a capacitor comprising the film. <P>SOLUTION: A tetragonal zirconium oxide film is formed on a substrate by repeating a unit cycle in which injection and purging of zirconium source and injection and purging of an oxidant are continuously performed in a unit atom vapor deposition chamber where the substrate is arranged. Otherwise, a unit cycle is repeated which consists of a first cycle in which injection and purging of zirconium source and injection and purging of oxidant are continuously performed in the unit atom vapor deposition chamber, and a second cycle in which injection of the oxidant (EXTRA_O<SB>3</SB>) and purging are continuously performed. In the unit atom vapor deposition process, the temperature of a substrate, concentration of the oxidant, and exposure condition of the oxidant are adjusted. <P>COPYRIGHT: (C)2008,JPO&INPIT |
