SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A method for fabricating a semiconductor device is provided to easily control the thickness and via resistance of a barrier layer in the lower part of a via hole by partially removing a barrier layer in the lower part of a via hole by a reverse sputtering method and by forming the removed part of the barrier layer. A semiconductor substrate(1) is prepared on which a lower conductor is formed. The semiconductor substrate is removed in a direction from the back surface of the semiconductor substrate toward the surface of the substrate so that a via hole(8) for exposing the lower conductor is formed. A first barrier layer(11) is formed in the via hole by a sputtering method or a PVD method. The first barrier layer deposited in the lower part of the via hole is partially removed by a reverse sputtering method to expose the surface of the lower conductor. A second barrier layer(12) is formed on the exposed lower conductor in the lower part of the via hole. A penetration electrode is formed on the second barrier layer in the via hole. An upper conductor electrically connected to the lower conductor by the through electrode is formed on the back surface of the semiconductor substrate. A seed layer for plating the penetration electrode can be formed on the second barrier layer.