| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To achieve cost reduction by decreasing chip area by improving the degree of integration of a memory even without greatly renewing a manufacturing apparatus. <P>SOLUTION: A memory cell of a nonvolatile memory includes an upper electrode and a lower electrode, and a state change part which can change in state only once from the upper electrode to the lower electrode. The state change part comprises a first semiconductor layer composed of one semiconductor between a P type semiconductor and an N type semiconductor and second semiconductor layers composed of the other semiconductor and provided on the top and reverse of the first semiconductor layer across PN junction parts. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
