POWER IC DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

In a power IC device, a surface layer channel CMOS transistor and a trench power MOS transistor are formed on the same chip. A source region (14) of the trench power MOS transistor is arranged at the same level as a gate electrode (21a) of the surface layer channel CMOS transistor. Thus, the power IC device and a method for manufacturing the power IC device are provided for reducing manufacturing cost in the case of forming the trench power MOS transistor and the surface channel CMOS transistor on the same chip.