| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent an occurrence of a light current in a circuit part even though the light such as a sun light, a light of a high intensity LED, or the like is irradiated to secure a stable circuit operation. <P>SOLUTION: The semiconductor device comprises first metal layers 11a, 11b for light shielding which cover the upper surface of a specific semiconductor circuit part 30 except a light emitting element or a light receiving element, and a light absorbing part 20 comprising an n-type diffusion region 21 for light absorption and an n-type well 22 for light absorption formed under the gap between the layer 11a and the layer 11b on a p-type semiconductor substrate. This constitution makes the layers 11a, 11b reflect most of the irradiated light and the part 20 absorb the carrier generated by the incoming light from the gap between the layers 11a, 11b to prevent the effect of the light current on the circuit part 30. <P>COPYRIGHT: (C)2008,JPO&INPIT |
