METHOD FOR FABRICATING VARIABLE RESISTANCE ELEMENT

摘要

[PROBLEMS] To fabricate a variable resistance element that is excellent as a capacitor-structured memory element. [MEANS FOR SOLVING PROBLEMS] A resistance layer (15) in an amorphous state is formed by keeping the resistance layer (15) at a temperature lower than 100 °C during film formation. Since the resistance layer (15) formed as a film by this invention does not include an fcc crystalline phase, if the resistance layer (15) in a crystalline state is heated to at least its melting point and then rapidly cooled down, the entire resistance layer is returned to the amorphous state. In addition, the resistance layer (15) formed as a film by this invention has a uniform resistivity distribution when it is crystallized. Accordingly, a variable resistance element (10) fabricated by this invention is excellent in the characteristics as a capacitor-structured memory element.