| 摘要 |
A through substrate which comprises a silicon substrate ( 10 ) having a through hole ( 19 ) penetrating a front surface ( 11 ) and a back surface ( 12 ), a oxidized silicon film ( 13 ) being provided along the inner wall surface of the through hole ( 19 ), layers ( 14, 15 ) comprising Zn and Cu, respectively, being formed on the inner wall surface of the oxidized silicon film ( 13 ), and a Cu plating layer ( 18 ) which has been grown from a Cu seed layer ( 17 ) along the inner wall surface of layers ( 14, 15 ) comprising Zn and Cu, respectively, via an insulating layer ( 16 ) between them. The above through substrate can provide a through electrode capable of avoiding the noise due to the cross talk. |
