Methods of forming a metal layer using transition metal precursors

摘要

Methods for depositing a metal layer on an integrated circuit device comprising providing a transition metal precursor, carrier gas and hydrogen gas to a deposition chamber such that the partial pressure of the precursor and carrier gas exceeds about 0.25 Torr and the partial pressure of hydrogen gas exceeds about 2.5 Torr are disclosed. Methods of forming a cobalt layer on an integrated circuit device are also disclosed.